| PART |
Description |
Maker |
| P600M6A10 P600B6A1 P600A6A05 P600G6A4 P600G P600J |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS voltage 700V. Maximum DC blocking voltage 1000V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V
SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) 一般整流（电压范围- 50000伏特，电六点○安培）
|
WINGS[Wing Shing Computer Components]
Vishay Intertechnology, Inc.
|
| D2797 D2796 D2088 D2090 D2089 |
4VA LOW PROFILE ENCAPSULATED TRANSFORMER
|
List of Unclassifed Manufacturers
|
| 2N6106 2N6290 2N6292 2N6291 |
MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| 2N5427 2N5428 2N3766 2N3767 2N3738 2N4240 2N4900 2 |
75 OHM BNC FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 2; FREQUENCY RANGE: 10 - 1,000 MHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.50 MAXIMUM; MAXIMUM
POWER TRANSISTORS
|
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| OP07D OP07DN OP07DR-REEL OP07DR-REEL7 OP07DR OP07D |
Ultralow Offset Voltage Operational Amplifier; Package: SOIC 150 MIL; No of Pins: 8; Temperature Range: Industrial OP-AMP, 350 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, PDSO8
150 μV Maximum Offset Voltage Op Amp
150 渭V Maximum Offset Voltage Op Amp
150 レV Maximum Offset Voltage Op Amp
|
Analog Devices, Inc.
|
| D1002UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应40W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1005 D1005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应80W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab PLC
SEME-LAB[Seme LAB]
|
| D1018UK D1018 |
CAT6 SOL PC PVC WHI 20FT PVC SOLID PATCH CORD
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应100W-28V-500MHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| D2007UK D2007 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-400MHz,单端)
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| ZMV831ATA ZMV831BTA ZV831 ZV831BV2TA ZMV832ATA ZMV |
SILICON 28V HYPERABRUPT VARACTOR DIODES
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8VHYPERABRUPT变容二极
25 Volt hyperabrupt varactor diode
SHELL, DSUB, 25, 90, BLK, POY, S (1011898)
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES UHF BAND, 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
BACKSHL, D-SUB, 9POS, MTL, NIPL, (914794) 22 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
28 V, silicon hyperabrupt varactor diode
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
